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AT28LV010-20TU

  • 描述:存储类型: Non-Volatile 存储格式: EEPROM 存储容量: 1Mb (128K x 8) 电源电压: 3V~3.6V 供应商设备包装: 32-TSOP
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 358.28809 358.28809
30+ 338.41473 10152.44196
  • 库存: 0
  • 单价: ¥358.28810
  • 数量:
    - +
  • 总计: ¥358.29
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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 存储格式 EEPROM
  • 技术 电可擦编程只读存储器
  • 安装类别 表面安装
  • 时钟频率 -
  • 工作温度 -40摄氏度~85摄氏度(TC)
  • 电源电压 3V~3.6V
  • 存储容量 1Mb (128K x 8)
  • 单字、单页写入耗时 10ms
  • 供应商设备包装 32-TSOP
  • 包装/外壳 32-TFSOP (0.724", 18.40毫米 Width)
  • 访达时期 200纳秒

AT28LV010-20TU 产品详情


High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components, it contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.

Feature

Description 

The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Programmable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µA.

 The AT28LV010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin.

 Atmel’s 28LV010 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. Software data protection is implemented to guard against inadvertent writes. The device also includes an extra 128 bytes of EEPROM for device identification or tracking.


Features
• Single 3.3V ± 10% Supply
• Fast Read Access Time – 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-Byte Page Write Operation
• Low Power Dissipation
– 15 mA Active Current
– 20 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 105  Cycles
– Data Retention: 10 Years
• JEDEC Approved Byte-Wide Pinout
• Industrial Temperature Range
• Green (Pb/Halide-free) Packaging Option Only


(Picture: Pinout)


AT28LV010-20TU所属分类:存储器,AT28LV010-20TU 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。AT28LV010-20TU价格参考¥358.288098,你可以下载 AT28LV010-20TU中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询AT28LV010-20TU规格参数、现货库存、封装信息等信息!
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