DRV5012AEDMRR

• Industry-Leading Low-Power Consumption
• Pin-Selectable Sampling Rate:
  • SEL = Low: 20 Hz Using 1.3 μA (1.8 V)
  • SEL = High: 2.5 kHz Using 142 μA (1.8 V)
• 1.65- to 5.5-V OperatingVCC Range
• High Magnetic Sensitivity:±2 mT (Typical)
• Robust Hysteresis: 4 mT(Typical)
• Push-Pull CMOS Output
• Small and Thin X2SON Package
• –40°Cto +85°C Operating Temperature Range

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The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with apin-selectable sampling rate.?

When a south magnetic pole is near the top of the package and theBOP threshold is exceeded, the device drives a low voltage. The output stayslow until a north pole is applied and the BRP threshold is crossed, whichcauses the output to drive a high voltage. Alternating north and south poles are required to togglethe output, and integrated hysteresis separates BOP andBRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updatesthe output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature canallow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and ispackaged in a small X2SON.