9icnet provides you with PSMN1R5-30YL,115 designed and produced by NXP USA Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. PSMN1R5-30YL,115 price reference $0.34000. NXP USA Inc. PSMN1R5-30YL,115 Package/Specification: MOSFET N-CH 30V LFPAK. You can download PSMN1R5-30YL,115 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
Prices and stocks marked on 9icnet are for reference only. If you don't find what you are looking for, you can contact us by email or online message, such as PSMN1R5-30YL,115 price, stock quantity, data sheet and manufacturer. We look forward to your contact and provide you with quality service.
The PSMN1R5-30BLEJ is MOSFET N-CH 30V 120A D2PAK, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 1 Channel, the device is offered in D2PAK Supplier Device Package, the device has a Single of Configuration, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 401W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 14934pF @ 15V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 120A (Tc), and the Rds On Max Id Vgs is 1.5 mOhm @ 25A, 10V, and Vgs th Max Id is 2.15V @ 1mA, and the Gate Charge Qg Vgs is 228nC @ 10V, and Pd Power Dissipation is 401 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 99.2 ns, and Rise Time is 156.1 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 120 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Vgs th Gate Source Threshold Voltage is 1.7 V, and the Rds On Drain Source Resistance is 1.3 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 191.8 ns, and Typical Turn On Delay Time is 100.6 ns, and the Qg Gate Charge is 228 nC, and Channel Mode is Enhancement.
The PSMN1R5-25YL,115 is MOSFET N-CH 25V 100A LFPAK, that includes 2.15V @ 1mA Vgs th Max Id, they are designed to operate with a LFPAK, Power-SO8 Supplier Device Package, Series is shown on datasheet note for use in a TrenchMOS?, that offers Rds On Max Id Vgs features such as 1.5 mOhm @ 15A, 10V, Power Max is designed to work in 109W, as well as the Tape & Reel (TR) Alternate Packaging Packaging, the device can also be used as SC-100, SOT-669, 4-LFPAK Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 4830pF @ 12V of Input Capacitance Ciss Vds, and Gate Charge Qg Vgs is 76nC @ 10V, and the FET Type is MOSFET N-Channel, Metal Oxide, and FET Feature is Logic Level Gate, and the Drain to Source Voltage Vdss is 25V, and Current Continuous Drain Id 25°C is 100A (Tc).
PSMN1R5-25YL with circuit diagram manufactured by NXP. The PSMN1R5-25YL is available in LFPAK Package, is part of the FETs - Single.
PSMN1R5-30YL with EDA / CAD Models manufactured by NXP. The PSMN1R5-30YL is available in SOT669 Package, is part of the FETs - Single.
