9icnet provides you with PSMN4R1-30YLC,115 designed and produced by NXP USA Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. PSMN4R1-30YLC,115 price reference $0.28000. NXP USA Inc. PSMN4R1-30YLC,115 Package/Specification: MOSFET N-CH 30V 90A LFPAK. You can download PSMN4R1-30YLC,115 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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PSMN4R0-30YLDX with pin details, that includes TrenchMOS? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SC-100, SOT-669, 4-LFPAK, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 1 Channel, the device is offered in LFPAK, Power-SO8 Supplier Device Package, the device has a Single Triple Source of Configuration, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 64W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 1272pF @ 15V, and the FET Feature is Logic Level Gate, 4.5V Drive, and Current Continuous Drain Id 25°C is 95A (Tc), and the Rds On Max Id Vgs is 4 mOhm @ 25A, 10V, and Vgs th Max Id is 2.2V @ 1mA, and the Gate Charge Qg Vgs is 19.4nC @ 10V, and Pd Power Dissipation is 64 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 11.7 ns, and Rise Time is 21.2 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 95 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Vgs th Gate Source Threshold Voltage is 1.74 V, and the Rds On Drain Source Resistance is 4 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 14.9 ns, and Typical Turn On Delay Time is 10.7 ns, and the Qg Gate Charge is 9.1 nC, and Channel Mode is Enhancement.
PSMN4R0-25YLC with user guide manufactured by NXP. The PSMN4R0-25YLC is available in LFPAK Package, is part of the FETs - Single.
PSMN4R0-30YL with circuit diagram manufactured by NXP. The PSMN4R0-30YL is available in SOT669 Package, is part of the FETs - Single.
PSMN4R0-40YS with EDA / CAD Models manufactured by NXP. The PSMN4R0-40YS is available in SOP Package, is part of the FETs - Single.
