9icnet provides you with BUK9Y11-30B,115 designed and produced by NXP USA Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. BUK9Y11-30B,115 price reference $0.22000. NXP USA Inc. BUK9Y11-30B,115 Package/Specification: MOSFET N-CH 30V 59A LFPAK. You can download BUK9Y11-30B,115 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
Prices and stocks marked on 9icnet are for reference only. If you don't find what you are looking for, you can contact us by email or online message, such as BUK9Y11-30B,115 price, stock quantity, data sheet and manufacturer. We look forward to your contact and provide you with quality service.
The BUK9Y107-80EX is MOSFET N-CH 80V 11.8A LFPAK, that includes TrenchMOS? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SC-100, SOT-669, 4-LFPAK, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 1 Channel, the device is offered in LFPAK, Power-SO8 Supplier Device Package, the device has a Single of Configuration, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 37W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 80V, and Input Capacitance Ciss Vds is 706pF @ 25V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 11.8A (Tc), and the Rds On Max Id Vgs is 98 mOhm @ 5A, 10V, and Vgs th Max Id is 2.1V @ 1mA, and the Gate Charge Qg Vgs is 6.2nC @ 5V, and Pd Power Dissipation is 37 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 7.3 ns, and Rise Time is 7.5 ns, and the Vgs Gate Source Voltage is 15 V, and Id Continuous Drain Current is 11.8 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Vgs th Gate Source Threshold Voltage is 1.7 V, and the Rds On Drain Source Resistance is 89.7 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 9.6 ns, and Typical Turn On Delay Time is 5.5 ns, and the Qg Gate Charge is 6.2 nC, and Channel Mode is Enhancement.
BUK9Y104-100B with user guide manufactured by NXP. The BUK9Y104-100B is available in N-channel Package, is part of the FETs - Single.
BUK9Y11-30B with circuit diagram manufactured by NXP. The BUK9Y11-30B is available in LFPAK Package, is part of the FETs - Single.
