9icnet provides you with MMS-107-01-L-DV designed and produced by Samtec Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. MMS-107-01-L-DV price reference $3.12000. Samtec Inc. MMS-107-01-L-DV Package/Specification: CONN RCPT 14POS 0.079 GOLD PCB. You can download MMS-107-01-L-DV english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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MMS-102-01-L-DH with pin details, that includes Black Color, they are designed to operate with a MMS Series, Packaging is shown on datasheet note for use in a Tube, that offers Termination features such as Solder, Mounting Type is designed to work in Through Hole, Right Angle, as well as the Receptacle Connector Type, the device can also be used as Gold Contact Finish. In addition, the Contact Finish Thickness is 10μin (0.25μm), the device is offered in 4 Number of Positions, the device has a All of Number of Positions Loaded, and Pitch is 0.079" (2.00mm), and the Number of Rows is 2, and Contact Type is Female Socket, and the Row Spacing is 0.079" (2.00mm).
MMRF5015NR5 with user guide manufactured by NXP / Freescale. is part of the Transistors - FETs, MOSFETs - Single, , and with support for "RF MOSFET Transistors Wideband RF Power GaN Transistor 1-2700 MHz, RF Mosfet HEMT 50V 350mA 2.5GHz 16.6dB 125W OM-270-2, Trans RF MOSFET 125V 2-Pin OM-270 T/R, RF MOSFET Transistors Wideband RF Power GaN Transistor 1-2700 MHz, 125 W CW, 50 V.
MMRF5300NR5 with circuit diagram manufactured by NXP / Freescale. is part of the Transistors - FETs, MOSFETs - Single, , and with support for "RF MOSFET Transistors 2700-3500 MHz, RF Mosfet HEMT 50V 70mA 2.7GHz ~ 3.5GHz 17dB 60W OM-270-2, RF POWER GAN ON SIC TRANSISTOR, RF MOSFET Transistors 2700-3500 MHz, 60 W PEAK, 50V WIDEBAND RF POWER GaN TRANSISTOR.
