Leading-Edge Performance
• 350+ MHz System Performance
• 500+ MHz Internal Performance
• High-Performance Embedded FIFOs
• 700 Mb/s LVDS Capable I/Os
Specifications
• Up to 2 Million Equivalent System Gates
• Up to 684 I/Os
• Up to 10,752 Dedicated Flip-Flops
• Up to 295 kbits Embedded SRAM/FIFO
• Manufactured on Advanced 0.15 μm CMOS Antifuse Process Technology, 7 Layers of Meta
Feature
• Single-Chip, Nonvolatile Solution
• Up to 100% Resource Utilization with 100% Pin Locking
• 1.5 V Core Voltage for Low Power
• Footprint Compatible Packaging
• Flexible, Multi-Standard I/Os:
– 1.5 V, 1.8 V, 2.5 V, 3.3 V Mixed Voltage Operation
– Bank-Selectable I/Os – 8 Banks per Chip
– Single-Ended I/O Standards: LVTTL, LVCMOS, 3.3V PCI, and 3.3 V PCI-X
– Differential I/O Standards: LVPECL and LVDS
• Up to 100% Resource Utilization with 100% Pin Locking
• 1.5 V Core Voltage for Low Power
• Footprint Compatible Packaging
• Flexible, Multi-Standard I/Os:
– 1.5 V, 1.8 V, 2.5 V, 3.3 V Mixed Voltage Operation
– Bank-Selectable I/Os – 8 Banks per Chip
– Single-Ended I/O Standards: LVTTL, LVCMOS, 3.3V PCI, and 3.3 V PCI-X
– Differential I/O Standards: LVPECL and LVDS
