The ADG609BN is designed on an enhanced LC2 MOS process which provides low power dissipation yet gives high switching speed and low on resistance. Each channel conducts equally well in both directions when ON and has an input signal range which extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. All channels exhibit break before make switching action preventing momentary shorting when switching channels. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.
Feature
- +3 V, +5 V, ±5 V Power Supplies
- VSS to VDD Analog Signal Range
- Low On-Resistance (30 O max)
- Fast Switching Timeston 75 ns maxtoff 45 ns max
- Low Power Dissipation (1.5µW max)
- Break-Before-Make Switching Action
- ESD > 5000V as per Military
- Standard 3015.7
- TTL/CMOS Compatible
- 16-Lead DIP/SOIC/TSSOP Packages
