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AT28C256E-15JU

  • 描述:存储类型: Non-Volatile 存储格式: EEPROM 存储容量: 256Kb (32K x 8) 电源电压: 4.5伏~5.5伏 供应商设备包装: 32-PLCC(13.97x11.43)
  • 品牌: 微芯 (Microchip)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 1867
  • 单价: ¥89.01524
  • 数量:
    - +
  • 总计: ¥89.02
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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 安装类别 表面安装
  • 制造厂商 微芯 (Microchip)
  • 存储格式 EEPROM
  • 技术 电可擦编程只读存储器
  • 存储接口 并联
  • 时钟频率 -
  • 电源电压 4.5伏~5.5伏
  • 工作温度 -40摄氏度~85摄氏度(TC)
  • 存储容量 256Kb (32K x 8)
  • 访达时期 150纳秒
  • 单字、单页写入耗时 10ms
  • 包装/外壳 32-LCC(J引线)
  • 供应商设备包装 32-PLCC(13.97x11.43)

AT28C256E-15JU 产品详情

High-performance 256K EEPROM offers access times to 150ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 200μA .It is accessed like static RAM for the read or write cycle without external components. It contains a 64-byte page register to allow writing of up to 64bytes simultaneously.The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.

Feature

Features 

• Fast Read Access Time 

– 150 ns 

• Automatic Page Write Operation 

– Internal Address and Data Latches for 64 Bytes 

– Internal Control Timer 

• Fast Write Cycle Times 

– Page Write Cycle Time: 3 ms or 10 ms Maximum 

– 1 to 64-byte Page Write Operation 

• Low Power Dissipation 

– 50 mA Active Current 

– 200 µA CMOS Standby Current 

• Hardware and Software Data Protection 

• DATA Polling for End of Write Detection 

• High Reliability CMOS Technology 

– Endurance: 104 or 105 Cycles 

– Data Retention: 10 Years 

• Single 5V ± 10% Supply 

• CMOS and TTL Compatible Inputs and Outputs 

• JEDEC Approved Byte-wide Pinout 

• Full Military and Industrial Temperature Ranges 

• Green (Pb/Halide-free) Packaging Option

Description

The AT28C256 is a high-performance electrically erasable and programmable readonly memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 200 µA. 

The AT28C256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin.

Atmel’s AT28C256 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.


(Picture: Pinout)


AT28C256E-15JU所属分类:存储器,AT28C256E-15JU 由 微芯 (Microchip) 设计生产,可通过久芯网进行购买。AT28C256E-15JU价格参考¥89.015241,你可以下载 AT28C256E-15JU中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询AT28C256E-15JU规格参数、现货库存、封装信息等信息!

微芯 (Microchip)

微芯 (Microchip)

Microchip Technology Inc.是微控制器和模拟半导体的领先供应商,为全球数千种不同的客户应用程序提供低风险的产品开发、更低的系统总成本和更快的上市时间。Microchip总部位于亚利...

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