The S34ML01G200BHI000 parts are SRAM Memory Chip, S34ML01G200BHI000- 1Gbit, manufactured by CYPRESS are available for purchase at 9icnet Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The S34ML01G200BHI000 components of 9icnet Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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S34ML01G200BHB000 with pin details, that includes ML-2 Series, they are designed to operate with a Tray Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, it has an Operating Temperature Range range of - 40 C to + 105 C, Package Case is designed to work in 63-VFBGA, it has an Operating Temperature range of -40°C ~ 105°C (TA), the device can also be used as Parallel Interface. In addition, the Voltage Supply is 2.7 V ~ 3.6 V, the device is offered in 63-BGA (11x9) Supplier Device Package, the device has a 1G (128M x 8) of Memory Size, and Memory Type is FLASH - NAND, and the Speed is 25ns, and Architecture is Multiplane, and the Format Memory is FLASH, and Interface Type is Parallel, and the Organization is 128 M x 8, and Supply Current Max is 30 mA, and the Data Bus Width is 8 bit, and Supply Voltage Max is 3.6 V, and the Supply Voltage Min is 2.7 V, and Timing Type is Asynchronous.
S34ML01G200BHA003 with user guide, that includes 2.7 V ~ 3.6 V Voltage Supply, they are designed to operate with a 63-BGA (11x9) Supplier Device Package, Speed is shown on datasheet note for use in a 25ns, that offers Series features such as ML-2, Packaging is designed to work in Tape & Reel (TR) Alternate Packaging, as well as the 63-VFBGA Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA). In addition, the Memory Type is FLASH - NAND, the device is offered in 1G (128M x 8) Memory Size, the device has a Parallel of Interface, and Format Memory is FLASH.
The S34ML01G200BHB003 is Flash Memory manufactured by Cypress. is part of the Memory, , and with support for Flash Memory, FLASH - NAND Memory IC 1Gb (128M x 8) Parallel, 4-BIT ECC, X8 I/O AND 3V VCC S.
