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S29GL512P12TFIV20

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 512Mb (32M x 16) 电源电压: 1.65伏~3.6伏 供应商设备包装: 56-TSOP
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 23

  • 库存: 0
  • 单价: ¥91.76754
  • 数量:
    - +
  • 总计: ¥2,110.65
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规格参数

  • 存储类型 Non-Volatile
  • 制造厂商 英飞凌 (Infineon)
  • 存储格式 FLASH
  • 技术 FLASH-NOR
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储接口 并联
  • 时钟频率 -
  • 电源电压 1.65伏~3.6伏
  • 单字、单页写入耗时 120纳秒
  • 访达时期 120纳秒
  • 存储容量 512Mb (32M x 16)
  • 包装/外壳 56-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 56-TSOP
  • 部件状态 过时的

S29GL512P12TFIV20 产品详情

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics
■ Single 3V read/program/erase (2.7-3.6 V)
■ Enhanced VersatileI/O™ control
   – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ 90 nm MirrorBit process technology
■ 8-word/16-byte page read buffer
■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
■ Secured Silicon Sector region
   – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
   – Can be programmed and locked at the factory or by the customer
■ Uniform 64 Kword/128 Kbyte Sector Architecture
   – S29GL01GP: One thousand twenty-four sectors
   – S29GL512P: Five hundred twelve sectors
   – S29GL256P: Two hundred fifty-six sectors
   – S29GL128P: One hundred twenty-eight sectors
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
■ Offered Packages
   – 56-pin TSOP
   – 64-ball Fortified BGA
■ Suspend and Resume commands for Program and Erase operations
■ Write operation status bits indicate program and erase operation completion
■ Unlock Bypass Program command to reduce programming time
■ Support for CFI (Common Flash Interface)
■ Persistent and Password methods of Advanced Sector Protection
■ WP#/ACC input
   – Accelerates programming time (when VHH is applied) for greater throughput during system production
   – Protects first or last sector regardless of sector protection settings
■ Hardware reset input (RESET#) resets device
■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 

S29GL512P12TFIV20所属分类:存储器,S29GL512P12TFIV20 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。S29GL512P12TFIV20价格参考¥91.767543,你可以下载 S29GL512P12TFIV20中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询S29GL512P12TFIV20规格参数、现货库存、封装信息等信息!
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