High-performance 256K EEPROM offers access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components. It contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Feature
- 32 Kbits x 8 (256 Kbit)
- 2.7V to 3.6V Supply
- Parallel Interface
- 200ns access time
- Self-Timed Erase and Write Cycles (10 ms max)
- Page Write and Byte Write
- Data Polling for end of write detection
- Low Power Consumption
- Read / Write current 15 mA (Max)
- Standby current 20 μA (Typ), 50 μA (Max)
- Write-Protection
- Hardware Protection
- Software Data Protect
- More than 100,000 erase/write cycles
- Data retention > 10 years
- Temperature Ranges
- Standard Temperature Range: -40°C to 85°C
- Available in Green (Pb/Halide-free) Packaging Only
- 32-lead, Plastic J-leaded Chip Carrier (PLCC)
- 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
- 28-lead, Plastic Thin Small Outline Package (TSOP)
