久芯网

SST39VF6401B-70-4I-B1KE

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 64Mb (4M x 16) 电源电压: 2.7伏~3.6伏 供应商设备包装: 48-TFBGA
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥3.15283
  • 数量:
    - +
  • 总计: ¥3.15
在线询价

温馨提示: 请填写以下信息,以便客户代表及时与您沟通联系。

规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 存储格式 FLASH
  • 电源电压 2.7伏~3.6伏
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 制造厂商 美国微芯 (MICROCHIP)
  • 存储接口 并联
  • 时钟频率 -
  • 存储容量 64Mb (4M x 16)
  • 访达时期 70 ns
  • 包装/外壳 48-TFBGA
  • 技术 闪光
  • 单字、单页写入耗时 10s
  • 供应商设备包装 48-TFBGA

SST39VF6401B-70-4I-B1KE 产品详情

The SST39VF6401B-70-4I-B1KE device is a 4M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF6401B-70-4I-B1KE writes (Program or Erase) with a 2.7-3.6V power supply. This devices conforms to JEDEC standard pinouts for x16 memories and is command set compatible with Flash devices that support the AMD/Spansion command set, enabling customers to save time and resources in implementation.

Feature

  • Organized as 4M x16
  • Single Voltage Read and Write Operations– 2.7-3.6V
  • Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
  • Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF6402B– Bottom Block-Protection (bottom 32 KWord)for SST39VF6401B
  • Sector-Erase Capability– Uniform 2 KWord sectors
  • Block-Erase Capability– Uniform 32 KWord blocks
  • Chip-Erase Capability
  • Erase-Suspend/Erase-Resume Capabilities
  • Hardware Reset Pin (RST#)
  • Security-ID Feature– SST: 128 bits; User: 128 bits
  • Fast Read Access Time:– 70 ns– 90 ns
  • Latched Address and Data
  • Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
  • Automatic Write Timing– Internal VPP Generation
  • End-of-Write Detection– Toggle Bits– Data# Polling
  • CMOS I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pin Assignments– Software command sequence compatibility- Address format is 11 bits, A10-A0- Block-Erase 6th Bus Write Cycle is 30H- Sector-Erase 6th Bus Write Cycle is 50H
  • Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (8mm x 10mm)
  • All non-Pb (lead-free) devices are RoHS compliant

SST39VF6401B-70-4I-B1KE所属分类:存储器,SST39VF6401B-70-4I-B1KE 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST39VF6401B-70-4I-B1KE价格参考¥3.152834,你可以下载 SST39VF6401B-70-4I-B1KE中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST39VF6401B-70-4I-B1KE规格参数、现货库存、封装信息等信息!
会员中心 微信客服
客服
回到顶部