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CY62147EV30LL-45ZSXI

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 4Mb (256K x 16) 电源电压: 2.2伏~3.6伏 供应商设备包装: 44-TSOP II
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 13
  • 单价: ¥38.31494
  • 数量:
    - +
  • 总计: ¥38.31
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规格参数

  • 部件状态 可供货
  • 存储类型 Volatile
  • 制造厂商 英飞凌 (Infineon)
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储接口 并联
  • 存储格式 SRAM
  • 时钟频率 -
  • 技术 SRAM-异步
  • 电源电压 2.2伏~3.6伏
  • 存储容量 4Mb (256K x 16)
  • 包装/外壳 44-TSOP (0.400", 10.16毫米 Width)
  • 供应商设备包装 44-TSOP II
  • 单字、单页写入耗时 45ns
  • 访达时期 45纳秒

CY62147EV30LL-45ZSXI 产品详情

The CY62147EV30LL-45ZSXI is a 4-Mbit high performance CMOS Static Random Access Memory (SRAM) organized as 256K words by 16-bit. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. To write to the device, take chip enable and write enable inputs LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins. To read from the device, take chip enable and output enable LOW while forcing the write enable HIGH.

Feature

  • Very high speed - 45ns
  • Pin compatible with CY62147DV30
  • Ultralow standby power
  • Ultralow active power
  • Easy memory expansion with CE and OE
  • Automatic power down when deselected
  • CMOS for optimum speed/power
CY62147EV30LL-45ZSXI所属分类:存储器,CY62147EV30LL-45ZSXI 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。CY62147EV30LL-45ZSXI价格参考¥38.314941,你可以下载 CY62147EV30LL-45ZSXI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询CY62147EV30LL-45ZSXI规格参数、现货库存、封装信息等信息!
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