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IS42S16320D-7TLI

  • 描述:存储类型: Volatile 存储格式: DRAM 存储容量: 512Mb (32M x 16) 电源电压: 3V~3.6V 时钟频率: 143兆赫 供应商设备包装: 54-TSOP II
  • 品牌: 芯成 (ISSI)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥133.99365
  • 数量:
    - +
  • 总计: ¥133.99
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规格参数

  • 制造厂商 芯成 (ISSI)
  • 存储类型 Volatile
  • 部件状态 不适用于新设计
  • 存储格式 DRAM
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储接口 并联
  • 单字、单页写入耗时 -
  • 技术 同步动态随机存取内存
  • 电源电压 3V~3.6V
  • 包装/外壳 54-TSOP (0.400", 10.16毫米 Width)
  • 供应商设备包装 54-TSOP II
  • 存储容量 512Mb (32M x 16)
  • 访达时期 5.4 ns
  • 时钟频率 143兆赫

IS42S16320D-7TLI 产品详情

The IS42S16320D-7TLI is a high speed CMOS, dynamic Random Access Memory (RAM) designed to operate in either 3.3 or 2.5V Vdd/Vddq memory systems, depending on the DRAM option. It is internally configured as a quad-bank DRAM with a synchronous interface. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 512Mb SDRAM (536870912-bit) has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide pre-charge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row pre-charge initiated at the end of the burst sequence is available with the AUTOpre-charge function enabled. Pre-charge one bank while accessing one of the other three banks will hide the pre-charge cycles and provide seamless, high-speed, random-access operation.

Feature

  • Clock frequency - 143MHz
  • Fully synchronous, all signals referenced to a positive clock edge
  • Internal bank for hiding row access/pre-charge
  • LVTTL interface
  • Programmable burst length
  • Programmable burst sequence - sequential/interleave
  • Auto refresh (CBR)
  • Self refresh
  • 8K Refresh cycle/64ms
  • Random column address every clock cycle
  • Programmable CAS latency
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and pre-charge command
  • Speed - 7ns
IS42S16320D-7TLI所属分类:存储器,IS42S16320D-7TLI 由 芯成 (ISSI) 设计生产,可通过久芯网进行购买。IS42S16320D-7TLI价格参考¥133.993650,你可以下载 IS42S16320D-7TLI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询IS42S16320D-7TLI规格参数、现货库存、封装信息等信息!

芯成 (ISSI)

芯成 (ISSI)

Integrated Silicon Solution,Inc.(ISSI)是为以下主要市场设计、开发和销售高性能集成电路的技术领导者:(i)汽车,(ii)通信,(iii)数字消费品,以及(iv)工业和...

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