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24LC515-I/SM

  • 描述:存储类型: Non-Volatile 存储格式: EEPROM 存储容量: 512Kb (64K x 8) 电源电压: 2.5伏~5.5伏 时钟频率: 400千赫 供应商设备包装: 8-SOIJ
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 2415
  • 单价: ¥37.01122
  • 数量:
    - +
  • 总计: ¥37.01
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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 制造厂商 美国微芯 (MICROCHIP)
  • 存储格式 EEPROM
  • 存储接口 IOC
  • 技术 电可擦编程只读存储器
  • 时钟频率 400千赫
  • 单字、单页写入耗时 5ms
  • 访达时期 900 ns
  • 电源电压 2.5伏~5.5伏
  • 包装/外壳 8-SOIC (0.209", 5.30毫米 Width)
  • 供应商设备包装 8-SOIJ
  • 存储容量 512Kb (64K x 8)

24LC515-I/SM 产品详情

The 24LC515-I/SM is a 512kB I²C serial Electrically Erasable Programmable Read-Only Memory (EEPROM) capable of operation across a broad voltage range 1.7 to 5.5V. It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device has both byte write and page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads. Reads may be sequential within address boundaries 0000h to 7FFFh and 8000h to FFFFh. Functional address lines allow up to four devices on the same data bus. This allows for up to 2Mb total system EEPROM memory.

Feature

  • Single supply with operation down to 2.5V
  • Low-power CMOS technology
  • 2-wire serial interface (I²C™ compatible)
  • Cascadable up to four devices
  • Schmitt trigger inputs for noise suppression
  • Output slope control to eliminate ground bounce
  • 100 and 400kHz Clock compatibility
  • Page write time 5ms maximum
  • Self-timed erase/write cycle
  • 64-byte page write buffer
  • Hardware write-protect
  • ESD protection >4000V
  • More than 1million erase/write cycles
  • Data retention >200 years
24LC515-I/SM所属分类:存储器,24LC515-I/SM 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。24LC515-I/SM价格参考¥37.011219,你可以下载 24LC515-I/SM中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询24LC515-I/SM规格参数、现货库存、封装信息等信息!
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