MR44V100AMAZAATL

ROHM Semiconductor 1Mbit 128k x 8-bit FeRAM memories are nonvolatile Ferroelectric Random Access Memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V100A FeRAM is accessed using two-wire serial interface (I2C Bus) and MR45V100A FeRAM using serial peripheral interface. These FeRAM devices eliminate battery backup required to hold data as cells are nonvolatile. The FeRAM memories offer no mechanisms of erasing and programming memory cells and blocks as those are used for various EEPROMs. These FeRAM devices are used in applications guaranteed for write/read tolerance of 1012 cycles per bit.