The CY62158EV30LL-45BVXI MoBL® is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption.
Placing the device into standby mode reduces power consumption significantly when deselected (CE1 HIGH or CE2 LOW). To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A19). To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and OE LOW while forcing the WE HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins.
Feature
■ Very high speed: 45 ns
❐ Wide voltage range: 4.5 V–5.5 V
■ Ultra low active power
❐ Typical active current:1.8 mA at f = 1 MHz
❐ Typical active current: 18 mA at f = fmax
■ Ultra low standby power
❐ Typical standby current: 2 A
❐ Maximum standby current: 8 A
■ Easy memory expansion with CE1, CE2 and OE features
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Offered in Pb-free 44-pin TSOP II package
