The X28HC256SZ-12 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256SZ-12 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256SZ-12 also featuresDATA polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256SZ-12 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256SZ-12 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years
Feature
- Access time: 90ns
- Simple byte and page write
- Single 5V supply
- No external high voltages or VP-P control circuits
- Self timed
- No erase before write
- No complex programming algorithms
- No overerase problem
- Low power CMOS
- Active: 60mA
- Standby: 500μA
- Software data protection
- Protects data against system level inadvertent writes
- High speed page write capability
- Highly reliable Direct Write™ cell
- Endurance: 100,000 cycles
- Data retention: 100 years
- Early end of write detection
- DATA polling
- Toggle bit polling
- RoHS compliant
