The IDT7164L35YG8 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology.
Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a low power stand by mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164L35YG8 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.
The IDT7164L35YG8 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-pin 600 mil CERDIP.
Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
Feature
◆ High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 15/20/25/35ns (max.)
◆ Low power consumption
◆ Battery backup operation – 2V data retention voltage (L Version only)
◆ Produced with advanced CMOS high-performance technology
◆ Inputs and outputs directly TTL-compatible
◆ Three-state outputs
◆ Available in 28-pin DIP, CERDIP and SOJ
◆ Military product compliant to MIL-STD-883, Class B
