The SST25VF080B-80-4I-SAE devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B-80-4I-SAE SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Feature
- Single Voltage Read and Write Operations– 2.7-3.6V
- Serial Interface Architecture
- Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption:
- Program & Erase Current: 30mA (max)
- Active Read Current: 10 mA (typical)
- Standby Current: 5 µA (typical)
- Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte & 64 KByte overlay blocks
- Fast Erase and Byte-Program:
- Chip-Erase Time: 35 ms (typical)
- Sector-/Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 7 µs (typical)
- Auto Address Increment (AAI) Programming
- Decrease total chip programming time over Byte-Program operations
- End-of-Write Detection
- Software polling the BUSY bit in Status Register
- Busy Status readout on SO pin in AAI Mode
- Hold Pin (HOLD#)
- Suspends a serial sequence to the memory without deselecting the device
- Write Protection (WP#)
- Enables/Disables the Lock-Down function of the status register
- Software Write Protection
- Write protection through Block-Protection bits in the status register
- Temperature Range
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
- Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
- All devices are RoHS compliant
