The MB85R256FPF-G-BNDE1 is a 256kB Ferroelectric Random Access Memory (FRAM) chip in a configuration of 32768 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 10¹⁰ read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM.
Feature
- High endurance 10 billion read/writes
- Peripheral circuit CMOS construction
- Operating power supply voltage - 2.7 to 3.6V
- Data retention - 10 years
Applications
Computers & Computer Peripherals, Industrial