The LTC1155CN8 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.
Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.
The LTC1155CN8 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155CN8 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required.
The LTC1155CN8 is available in both 8-pin PDIP and 8-pin SO packages.
Feature
- Fully Enhances N-Channel Power MOSFETs
- 8μA Standby Current
- 85μA ON Current
- Short-Circuit Protection
- Wide Power Supply Range: 4.5V to 18V
- Controlled Switching ON and OFF Times
- No External Charge Pump Components
- Replaces P-Channel High Side MOSFETs
- Compatible with Standard Logic Families
- Available in 8-Pin SO Package
Applications
- Laptop Power Bus Switching
- SCSI Termination Power Switching
- Cellular Phone Power Management
- P-Channel Switch Replacement
- Relay and Solenoid Drivers
- Low Frequency Half H-Bridge
- Motor Speed and Torque Control
