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IR2110SPBF

  • 描述:闸门类型: IGBT,N通道MOSFET 驱动器配置: 半桥 通道类型: 独立的 电源电压: 3.3伏~20伏 供应商设备包装: 16-SOIC 安装类别: 表面安装
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥33.24491
  • 数量:
    - +
  • 总计: ¥33.24
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规格参数

  • 部件状态 可供货
  • 驱动器配置 半桥
  • 通道类型 独立的
  • 驱动器数量 two
  • 闸门类型 IGBT,N通道MOSFET
  • 制造厂商 英飞凌 (Infineon)
  • 工作温度 -40摄氏度~150摄氏度(TJ)
  • 安装类别 表面安装
  • 输入类别 非反相
  • 逻辑电压-VIL、VIH 6V, 9.5V
  • 包装/外壳 16-SOIC(0.295“,7.50毫米宽)
  • 供应商设备包装 16-SOIC
  • 波峰值电流输出 (灌入,提拉) 2A,2A
  • 高侧最大电压 (自举) 500 V
  • 电源电压 3.3伏~20伏
  • 上升/下降时长(典型值) 25ns, 17ns

IR2110SPBF 产品详情

Features
·Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
·Gate drive supply range from 10 to 20V·Undervoltage lockout for both channels
·3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
·CMOS Schmitt-triggered inputs with pull-down·Cycle by cycle edge-triggered shutdown logic
·Matched propagation delay for both channels

·Outputs in phase with inputs

Description 

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGB T drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.Propagation delays are matched to simplify use in high frequency applications.The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.


(Picture: Pinout)


IR2110SPBF所属分类:栅极驱动器,IR2110SPBF 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。IR2110SPBF价格参考¥33.244911,你可以下载 IR2110SPBF中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询IR2110SPBF规格参数、现货库存、封装信息等信息!
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