The LTC4442EMS8E-1 is a high frequency gate driver designed to drive two N-channel MOSFETs in a synchronous buck DC/DC converter topology. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance.
The LTC4442EMS8E-1 features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4442EMS8E-1 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 42V above ground.
The LTC4442EMS8E-1 contains undervoltage lockout circuits on both the driver and logic supplies that turn off the external MOSFETs when an undervoltage condition is present. The LTC4442EMS8E-1 and LTC4442-1 have different undervoltage lockout thresholds to accommodate a wide variety of applications. An adaptive shoot-through protection feature is also built-in to prevent power loss resulting from MOSFET cross-conduction current.
The LTC4442/LTC4442-1 are available in the thermally enhanced 8-lead MSOP package.
Feature
- Wide VCC Range: 6V to 9.5V
- 38V Maximum Input Supply Voltage
- Adaptive Shoot-Through Protection
- 2.4A Peak Pull-Up Current
- 5A Peak Pull-Down Current
- 8ns TG Fall Time Driving 3000pF Load
- 12ns TG Rise Time Driving 3000pF Load
- Separate Supply to Match PWM Controller
- Drives Dual N-Channel MOSFETs
- Undervoltage Lockout
- Thermally Enhanced MSOP Package
Applications
- Distributed Power Architectures
- High Density Power Modules
(Picture: Pinout)
