The LTC1154HS8 single high-side gate driver allows using low cost N-channel FETs for high-side switching applications. An internal charge pump boosts the gate drive voltage above the positive rail, fully enhancing an N-channel MOS switch with no external components. Micropower operation, with 8µA standby current and 85µA operating current, allows use in virtually all systems with maximum efficiency.
Included on chip is programmable over-current sensing. A time delay can be added to prevent false triggering on high in-rush current loads. An active high shutdown input is also provided and interfaces directly to a standard PTC thermistor for thermal shutdown. An open-drain output is provided to report switch status to the µP. An active low enable input is provided to control multiple switches in banks.
The LTC1154HS8 is available in both 8-pin DIP and 8-pin SOIC packages.
Feature
- Fully Enhances N-Channel Power MOSFETs
- 8µA IQ Standby Current
- 85µA IQ ON Current
- No External Charge Pump Capacitors
- 4.5V to 18V Supply Range
- Short-Circuit Protection
- Thermal Shutdown via PTC Thermistor
- Status Output Indicates Shutdown
- Available in 8-Pin SOIC
Applications
- Laptop Computer Power Switching
- SCSI Termination Power Switching
- Cellular Telephone Power Management
- Battery Charging and Management
- High-Side Industrial and Automotive Switching
- Stepper Motor and DC Motor Control
(Picture: Pinout)
