The EMB1412MYE/NOPB MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412MYE/NOPB provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
Feature
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7 A Sink/3 A Source Current
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise Fall with 2 nF Load)
- Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device
- Supply Rail Under-Voltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
- Thermally Enhanced 8-Pin VSSOP Package
- Output Swings from VCC to VEE Which can be Negative Relative to Input Ground
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
