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ISL6608IB-T

  • 描述:闸门类型: N通道MOSFET 驱动器配置: 半桥 通道类型: 同步的 电源电压: 4.5伏~5.5伏 供应商设备包装: 8-SOIC 安装类别: 表面安装
  • 品牌: 瑞萨电子 (Renesas)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥22.77168
  • 数量:
    - +
  • 总计: ¥22.77
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规格参数

  • 部件状态 过时的
  • 驱动器配置 半桥
  • 驱动器数量 two
  • 通道类型 同步的
  • 闸门类型 N通道MOSFET
  • 安装类别 表面安装
  • 逻辑电压-VIL、VIH -
  • 供应商设备包装 8-SOIC
  • 制造厂商 瑞萨电子 (Renesas)
  • 输入类别 非反相
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
  • 工作温度 -40摄氏度~125摄氏度(TJ)
  • 波峰值电流输出 (灌入,提拉) 2A,2A
  • 电源电压 4.5伏~5.5伏
  • 上升/下降时长(典型值) 8ns, 8ns
  • 高侧最大电压 (自举) 22伏

ISL6608IB-T 产品详情

The ISL6608IB-T is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multiphase Buck PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V) and minimizes gate drive losses due to MOSFET gate charge at high switching frequency applications. Each driver is capable of driving a 3000pF load with a low propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6608IB-T features 4A sink current for the lower gate driver, which is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent shoot-through power loss caused by the high dv/dt of the Phase node. The ISL6608IB-T also features a Three-State PWM input which, working together with Intersil Multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed output voltage events. A diode emulation feature is integrated in the ISL6608IB-T to enhance converter efficiency at light load conditions. Diode emulation also prevents a negative transient when starting up with a pre-biased voltage on the output. When diode emulation is enabled, the driver allows discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turns off the low side MOSFET, which prevents the output from sinking current and producing a negative transient on a pre-biased output (see Figures 6 and 7 on page 7).

Feature

  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Adaptive Shoot-Through Protection
  • 0.5Ω On-Resistance and 4A Sink Current Capability
  • Supports High Switching Frequency up to 2MHz
  • Fast Output Rise/Fall Time and Low Propagation Delay
  • Three-State PWM Input for Power Stage Shutdown
  • Internal Bootstrap Schottky Diode
  • Low Bias Supply Current (5V, 80µA)
  • Diode Emulation for Enhanced Light Load Efficiency and Pre-Biased Startup Applications
  • VCC POR (Power-On-Reset) Feature Integrated
  • Low Three-State Shutdown Holdoff Time (Typically 160ns)
  • Pin-to-Pin Compatible with ISL6605
  • QFN Package:
  • Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
  • Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile
  • Pb-free Available as an Option


ISL6608IB-T所属分类:栅极驱动器,ISL6608IB-T 由 瑞萨电子 (Renesas) 设计生产,可通过久芯网进行购买。ISL6608IB-T价格参考¥22.771678,你可以下载 ISL6608IB-T中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询ISL6608IB-T规格参数、现货库存、封装信息等信息!

瑞萨电子 (Renesas)

瑞萨电子 (Renesas)

Renesas Electronics Corporation通过完整的半导体解决方案提供值得信赖的嵌入式设计创新,使数十亿连接的智能设备能够改善人们的工作和生活方式—安全可靠。作为微控制器...

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