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ISL6615IRZ

  • 描述:闸门类型: N通道MOSFET 驱动器配置: 半桥 通道类型: 同步的 电源电压: 6.8V ~ 13.2V 供应商设备包装: 10-DFN(3x3) 安装类别: 表面安装
  • 品牌: 瑞萨电子 (Renesas)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥33.38977
  • 数量:
    - +
  • 总计: ¥33.39
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规格参数

  • 部件状态 可供货
  • 驱动器配置 半桥
  • 驱动器数量 two
  • 通道类型 同步的
  • 闸门类型 N通道MOSFET
  • 安装类别 表面安装
  • 逻辑电压-VIL、VIH -
  • 制造厂商 瑞萨电子 (Renesas)
  • 输入类别 非反相
  • 工作温度 -40摄氏度~125摄氏度(TJ)
  • 包装/外壳 10-VFDFN外露衬垫
  • 高侧最大电压 (自举) 36伏
  • 电源电压 6.8V ~ 13.2V
  • 波峰值电流输出 (灌入,提拉) 2.5A, 4A
  • 上升/下降时长(典型值) 13ns, 10ns
  • 供应商设备包装 10-DFN(3x3)

ISL6615IRZ 产品详情

The ISL6615IRZ is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator.The ISL6615IRZ drives both upper and lower gates over a range of 4.5V to 13.2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.The ISL6615IRZ features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node.An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. The ISL6615IRZ includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted.The ISL6615IRZ also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage.

Feature

  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Advanced Adaptive Zero Shoot-Through Protection
  • Body Diode Detection
  • LGATE Detection
  • Auto-zero of rDS(ON) Conduction Offset Effect
  • Adjustable Gate Voltage for Optimal Efficiency
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency (up to 1MHz)
  • 6A LGATE Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • Support 3.3V PWM Input logic
  • Tri-State PWM Input for Safe Output Stage Shutdown
  • Tri-State PWM Input Hysteresis for Applications with Power Sequencing Requirement
  • Pre-POR Overvoltage Protection
  • VCC Undervoltage Protection
  • Expandable Bottom Copper PAD for Better Heat Spreading
  • Dual Flat No-Lead (DFN) Package
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)


ISL6615IRZ所属分类:栅极驱动器,ISL6615IRZ 由 瑞萨电子 (Renesas) 设计生产,可通过久芯网进行购买。ISL6615IRZ价格参考¥33.389769,你可以下载 ISL6615IRZ中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询ISL6615IRZ规格参数、现货库存、封装信息等信息!

瑞萨电子 (Renesas)

瑞萨电子 (Renesas)

Renesas Electronics Corporation通过完整的半导体解决方案提供值得信赖的嵌入式设计创新,使数十亿连接的智能设备能够改善人们的工作和生活方式—安全可靠。作为微控制器...

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