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ISL6609CBZ

  • 描述:闸门类型: N通道MOSFET 驱动器配置: 半桥 通道类型: 同步的 电源电压: 4.5伏~5.5伏 供应商设备包装: 8-SOIC 安装类别: 表面安装
  • 品牌: 瑞萨电子 (Renesas)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥21.85907
  • 数量:
    - +
  • 总计: ¥21.86
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规格参数

  • 部件状态 过时的
  • 驱动器配置 半桥
  • 驱动器数量 two
  • 通道类型 同步的
  • 闸门类型 N通道MOSFET
  • 安装类别 表面安装
  • 供应商设备包装 8-SOIC
  • 制造厂商 瑞萨电子 (Renesas)
  • 输入类别 非反相
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
  • 逻辑电压-VIL、VIH 1V, 2V
  • 工作温度 0摄氏度~125摄氏度(TJ)
  • 电源电压 4.5伏~5.5伏
  • 波峰值电流输出 (灌入,提拉) -,4A
  • 高侧最大电压 (自举) 36伏
  • 上升/下降时长(典型值) 8ns, 8ns

ISL6609CBZ 产品详情

The ISL6609, ISL6609A is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6609, ISL6609A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6609, ISL6609A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6609A's bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.

Feature

  • Drives Two N-Channel MOSFETs
  • Adaptive Shoot-Through Protection
  • 0.4Ω On-Resistance and 4A Sink Current Capability
  • Supports High Switching Frequency
  • Fast Output Rise and Fall
  • Ultra Low Three-State Hold-Off Time (20ns)
  • ISL6605 Replacement with Enhanced Performance
  • BOOT Capacitor Overcharge Prevention (ISL6609A)
  • Low VF Internal Bootstrap Diode
  • Low Bias Supply Current
  • Enable Input and Power-On Reset
  • QFN Package
  • Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)


ISL6609CBZ所属分类:栅极驱动器,ISL6609CBZ 由 瑞萨电子 (Renesas) 设计生产,可通过久芯网进行购买。ISL6609CBZ价格参考¥21.859072,你可以下载 ISL6609CBZ中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询ISL6609CBZ规格参数、现货库存、封装信息等信息!

瑞萨电子 (Renesas)

瑞萨电子 (Renesas)

Renesas Electronics Corporation通过完整的半导体解决方案提供值得信赖的嵌入式设计创新,使数十亿连接的智能设备能够改善人们的工作和生活方式—安全可靠。作为微控制器...

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