久芯网

ISL6613BEIB-T

  • 描述:闸门类型: N通道MOSFET 驱动器配置: 半桥 通道类型: 同步的 电源电压: 7V ~ 13.2V 供应商设备包装: 8-SOIC-EP 安装类别: 表面安装
  • 品牌: 瑞萨电子 (Renesas)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥21.26515
  • 数量:
    - +
  • 总计: ¥21.27
在线询价

温馨提示: 请填写以下信息,以便客户代表及时与您沟通联系。

规格参数

  • 部件状态 过时的
  • 驱动器配置 半桥
  • 驱动器数量 two
  • 通道类型 同步的
  • 闸门类型 N通道MOSFET
  • 安装类别 表面安装
  • 逻辑电压-VIL、VIH -
  • 制造厂商 瑞萨电子 (Renesas)
  • 输入类别 非反相
  • 工作温度 -40摄氏度~125摄氏度(TJ)
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width) Exposed Pad
  • 供应商设备包装 8-SOIC-EP
  • 高侧最大电压 (自举) 36伏
  • 电源电压 7V ~ 13.2V
  • 波峰值电流输出 (灌入,提拉) 1.25A,2A
  • 上升/下降时长(典型值) 26ns, 18ns

ISL6613BEIB-T 产品详情

The ISL6612B and ISL6613BEIB-T are high frequency MOSFETdrivers specifically designed to drive upper and lower powerN-Channel MOSFETs in a synchronous rectified buckconverter topology. These drivers combined with HIP63xx orISL65xx Multi-Phase Buck PWM controllers and N-ChannelMOSFETs form complete core-voltage regulator solutions foradvanced microprocessors.The ISL6612B drives the upper gate to above rising VCCPOR (7V), while the lower gate can be independently drivenover a range from 5V to 12V. The ISL6613BEIB-T drives bothupper and lower gates over a range of 5V to 12V. This drivevoltageprovides the flexibility necessary to optimizeapplications involving trade-offs between gate charge andconduction losses. These drivers are optimized for POLDC/DC Converters for IBA Systems.An advanced adaptive zero shoot-through protection isintegrated to prevent both the upper and lower MOSFETsfrom conducting simultaneously and to minimize the deadtime. These products add an overvoltage protection featureoperational before VCC exceeds its turn-on threshold, atwhich the PHASE node is connected to the gate of the lowside MOSFET (LGATE). The output voltage of the converteris then limited by the threshold of the low side MOSFET,which provides some protection to the microprocessor if theupper MOSFET(s) is shorted during initial start-up.These drivers also feature a three-state PWM input which,working together with Intersil’s multi-phase PWM controllers,prevents a negative transient on the output voltage when theoutput is shut down. This feature eliminates the Schottkydiode that is used in some systems for protecting the loadfrom reversed output voltage events.

Feature

  • Pin-to-pin Compatible with HIP6601 SOIC family
  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Low VCC Rising Threshold (7V) for IBA Applications.
  • Advanced Adaptive Zero Shoot-Through Protection
  • Body Diode Detection
  • Auto-zero of rDS(ON) Conduction Offset Effect
  • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency (up to 2MHz)
  • 3A Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • Three-State PWM Input for Output Stage Shutdown
  • Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
  • Pre-POR Overvoltage Protection
  • VCC Undervoltage Protection
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • Dual Flat No-Lead (DFN) Package
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)


ISL6613BEIB-T所属分类:栅极驱动器,ISL6613BEIB-T 由 瑞萨电子 (Renesas) 设计生产,可通过久芯网进行购买。ISL6613BEIB-T价格参考¥21.265154,你可以下载 ISL6613BEIB-T中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询ISL6613BEIB-T规格参数、现货库存、封装信息等信息!

瑞萨电子 (Renesas)

瑞萨电子 (Renesas)

Renesas Electronics Corporation通过完整的半导体解决方案提供值得信赖的嵌入式设计创新,使数十亿连接的智能设备能够改善人们的工作和生活方式—安全可靠。作为微控制器...

展开
会员中心 微信客服
客服
回到顶部