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ISL6612CBZ

  • 描述:闸门类型: N通道MOSFET 驱动器配置: 半桥 通道类型: 同步的 电源电压: 10.8伏~13.2伏 供应商设备包装: 8-SOIC 安装类别: 表面安装
  • 品牌: 瑞萨电子 (Renesas)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥21.67076
  • 数量:
    - +
  • 总计: ¥21.67
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规格参数

  • 部件状态 过时的
  • 驱动器配置 半桥
  • 驱动器数量 two
  • 通道类型 同步的
  • 闸门类型 N通道MOSFET
  • 安装类别 表面安装
  • 电源电压 10.8伏~13.2伏
  • 逻辑电压-VIL、VIH -
  • 供应商设备包装 8-SOIC
  • 制造厂商 瑞萨电子 (Renesas)
  • 输入类别 非反相
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
  • 工作温度 0摄氏度~125摄氏度(TJ)
  • 高侧最大电压 (自举) 36伏
  • 波峰值电流输出 (灌入,提拉) 1.25A,2A
  • 上升/下降时长(典型值) 26ns, 18ns

ISL6612CBZ 产品详情

The ISL6612CBZ and ISL6613 are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612CBZ drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613 drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during startup. The over-temperature protection feature prevents failures resulting from excessive power dissipation by shutting off the outputs when its junction temperature exceeds +150°C (typically). The driver resets once its junction temperature returns to +108°C (typically). These drivers also feature a three-state PWM input which, working together with Intersil's multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

Feature

  • Pin-to-pin Compatible with HIP6601 SOIC family for Better Performance and Extra Protection Features
  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Advanced Adaptive Zero Shoot-Through Protection
  • Body Diode Detection
  • Auto-zero of rDS(ON) Conduction Offset Effect
  • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency (up to 2MHz)
  • 3A Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • Three-State PWM Input for Output Stage Shutdown
  • Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
  • Pre-POR Overvoltage Protection
  • VCC Undervoltage Protection
  • Over Temperature Protection (OTP) with +42°C Hysteresis
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • Dual Flat No-Lead (DFN) Package
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free Available (RoHS Compliant)


ISL6612CBZ所属分类:栅极驱动器,ISL6612CBZ 由 瑞萨电子 (Renesas) 设计生产,可通过久芯网进行购买。ISL6612CBZ价格参考¥21.670757,你可以下载 ISL6612CBZ中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询ISL6612CBZ规格参数、现货库存、封装信息等信息!

瑞萨电子 (Renesas)

瑞萨电子 (Renesas)

Renesas Electronics Corporation通过完整的半导体解决方案提供值得信赖的嵌入式设计创新,使数十亿连接的智能设备能够改善人们的工作和生活方式—安全可靠。作为微控制器...

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