600 V three phase half bridge gate driver IC for IGBTs and MOSFETs with typical 0.2 A source and 0.35 A sink current in PDIP-28 package with junction-isolated level-shift technology. For improved negative transient voltage robustness up to -100 V and 50% lower level shift losses, please check our Infineon SOI 600 V three phase gate driver 6EDL04I06PT, 6EDL04I06NT, 6EDL04N06PT. Or 6EDL04N02PR which is a 200 V, 3-phase gate driver available in TSSOP-28 package。
Feature
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V (IR2136/IR21368), 11.5 V to 20 V (IR21364), or 12 V to 20 V (IR21363/IR21365/IR21366)
- Under-voltage lockout for all channels
- Over-current shutdown turns off all six drivers
- Independent 3 half-bridge drivers
- Matched propagation delay for all channels
- Cross-conduction prevention logic
- Low side output out of phase with inputs, high side outputs out of phase. (IR2136/IR21363/IR21365/IR21366/IR21368)
- Low side and high side outputs in phase with inputs. (IR21364)
- 3.3 V logic compatible
- Lower di/dt gate drive for better noise immunity
- Externally programmable delay for automatic fault clear
- LEAD-FREE and RoHS Compliant
Applications
- Power Tools
- Home Appliances
- Room air conditioners
- Refrigerator
- Vacuum Cleaner
- Washing Machine
- Light Electric Vehicle
- Motor Control and Drives
- Micro/Mini Inverter Drives
- 3D printers
