Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in half bridge configurations.
Feature
- Floating channel designed for bootstrap operation
- Integrated 600 V half-bridge gate driver
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V and 15 V input logic compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
- Logic and power ground +/- 5 V offset
- Internal 540ns dead-time
- Lower di/dt gate driver for better noise immunity
Applications
- Washing machines
- Motor control and drives
- Robotics
- Home and building automation
- Power tools
