The BS2103FE2 is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
Feature
- Floating Channels for Bootstrap Operation to +600V
- Gate drive supply range from 10V to 18V
- Built-in Under Voltage Lockout for Both Channels
- 3.3V and 5.0V Input Logic Compatible
- Matched Propagation Delay for Both Channels
- Output in phase with input