C4460

www.DataSheet.co.kr Ordering number:EN3331 NPN Triple Diffused Planar Silicon Transistor 500V/15A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, duty cycle≤10% 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions Ratings 800 500 7 15 25 4 3 55 150 –55 to +150 2.0 Unit V V V A A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1.2A VCE=5V, IC=6A 15- 8 Conditions Ratings min typ max 10 10 50- Unit µA µA – : For the hFE1 of the , specify two ranks or more in principle. 15 L 30 20 M 40 30 N 50 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2598HA (KT)/7190MH, TA (KOTO) No.3331–1/4 Datasheet pdf – http://www.DataSheet4U.net/ www.DataSheet.co.kr Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) VCE=10V, IC=1.2A VCB=10V, f=1MHz IC=6A, IB=1.2A IC=6A, IB=1.2A 800 500 7 500 0.5 3.0 0.3 Conditions Ratings min typ 18 160 1.0 1.5 max Unit MHz pF V V V V V V µs µs µs V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=∞ IE=1mA, IC=0 VCEX(sus) IC=5A, IB1=–IB2=2A, L=500µH, Clamped ton VCC=200V, 5IB1=–2.5IB2=IC […]