久芯网

SN74S225N

  • 描述:电源电压: 4.75 V ~ 5.25 V 存储容量: 80 (16 x 5) 数据速度率: 10MHz 供应商设备包装: 20-PDIP 工作温度: 0摄氏度~70摄氏度 安装类别: 通孔
  • 品牌: 德州仪器 (Texas)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 65

数量 单价 合计
1+ 25.81120 25.81120
200+ 9.99448 1998.89700
500+ 9.63716 4818.58200
1000+ 9.46901 9469.01300
  • 库存: 839
  • 单价: ¥25.81120
  • 数量:
    - +
  • 总计: ¥1,677.73
在线询价

温馨提示: 请填写以下信息,以便客户代表及时与您沟通联系。

规格参数

  • 部件状态 可供货
  • 访达时期 -
  • 制造厂商 德州仪器 (Texas)
  • 总线朝向 单向的
  • 功能 异步
  • 工作温度 0摄氏度~70摄氏度
  • 支持可编程标志
  • FWFT的支持
  • 安装类别 通孔
  • 最大供电电流 120毫安
  • 扩展类型 Width
  • 重传能力
  • 数据速度率 10MHz
  • 供应商设备包装 20-PDIP
  • 电源电压 4.75 V ~ 5.25 V
  • 存储容量 80 (16 x 5)
  • 包装/外壳 20-DIP(0.300“,7.62毫米)

SN74S225N 产品详情

This 80-bit active-element memory is a monolithic Schottky-clamped transistor-transistor logic (STTL) array organized as 16 words by 5 bits. A memory system using the SN74S225N easily can be expanded in multiples of 48 words or of 10 bits as shown in Figure 3. The 3-state outputs controlled by a single output-enable (OE\) input make bus connection and multiplexing easy.

A first-in, first-out (FIFO) memory is a storage device that allows data to be written into and read from its array at independent data rates. This FIFO is designed to process data at rates from dc to 10MHz in a bit-parallel format, word by word.

Reading or writing is done independently, utilizing separate asynchronous data clocks. Data can be written into the array on the low-to-high transition of either load-clock (CLKA, CLKB) input. Data can be read out of the array on the low-to-high transition of the unload-clock (UNCK IN) input (normally high). Writing data into the FIFO can be accomplished in one of two ways:

  • In applications not requiring a gated clock control, best results are achieved by applying the clock input to one of the clocks while tying the other clock input high.
  • In applications needing a gated clock, the load clock (gate control) must be high for the FIFO to load on the next clock pulse.

CLKA and CLKB can be used interchangeably for either clock gate control or clock input.

Status of the SN74S225N is provided by three outputs. The input-ready (IR) output monitors the status of the last word location and signifies when the memory is full. This output is high whenever the memory is available to accept any data. The unload-clock (UNCK OUT) output also monitors the last word location. This output generates a low-logic-level pulse (synchronized to the internal clock pulse) when the location is vacant. The third status output, output ready (OR), is high when the first word location contains valid data and UNCK IN is high. When UNCK IN goes low, OR will go low and stay low until new valid data is in the first word position. The first word location is defined as the location from which data is provided to the outputs.

The data outputs are noninverted with respect to the data inputs and are 3-state, with a common control input (OE\). When OE\ is low, the data outputs are enabled to function as totem-pole outputs. A high logic level forces each data output to a high-impedance state while all other inputs and outputs remain active.The clear (CLR\) input invalidates all data stored in the memory array by clearing the control logic and setting OR to a low logic level on the high-to-low transition of a low-active pulse.

The SN74S225N is characterized for operation from 0°C to 70°C.

Feature

  • Independent Asychronous Inputs and Outputs
  • 16 Words by 5 Bits
  • DC to 10-MHz Data Rate
  • 3-State Outputs
  • Packaged in Standard Plastic 300-mil DIPs
SN74S225N所属分类:先进先出(FIFO)存储芯片,SN74S225N 由 德州仪器 (Texas) 设计生产,可通过久芯网进行购买。SN74S225N价格参考¥25.811204,你可以下载 SN74S225N中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SN74S225N规格参数、现货库存、封装信息等信息!

德州仪器 (Texas)

德州仪器 (Texas)

德州仪器公司(TI)是一家开发模拟IC和嵌入式处理器的全球半导体设计和制造公司。通过雇用世界上最聪明的人,TI创造了塑造技术未来的创新。如今,TI正在帮助超过10万名客户改变未来。

会员中心 微信客服
客服
回到顶部