The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecturethat provides fast transient response, lowest outputcapacitance and highefficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamiccontrolof the output voltage and current monitor telemetry. Paired with TI GaNpower stages and drivers,the TPS53632G can switch up to 1 MHz to minimizemagnetic component size and reduce overall boardspace. The LMG5200 GaN powerstage is designed specifically for this controller to achieve highfrequencyand efficiency as high as 92% with 48-V to 1-V conversion.
Other features include adjustable control of output slew rate and voltagepositioning. Inaddition, the TPS53632G device can be used along with other TIdiscrete power MOSFETs and driversfor silicon-based half bridge solutions. TheTPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFNpackage and is rated to operate at a range between –10°C and105°C.
Feature
- Valley Current Mode with Constant ON Time Control
- LosslessCurrent Sensing Scheme
- I2C Interface for VID Control and Telemetry
- Programmable I2C Addresses up to EightDevices
- Switching Frequency up to 1 MHz
- Digital CurrentMonitor
- 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mVStep
- Accurate, Adjustable Voltage Positioning or Zero SlopeLoad-Line
- Selectable, 8-Level Current Limit
- AdjustableOutput Slew Rate Control
- Default Boot Voltage: 1.00V
- Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package
The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecturethat provides fast transient response, lowest outputcapacitance and highefficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamiccontrolof the output voltage and current monitor telemetry. Paired with TI GaNpower stages and drivers,the TPS53632G can switch up to 1 MHz to minimizemagnetic component size and reduce overall boardspace. The LMG5200 GaN powerstage is designed specifically for this controller to achieve highfrequencyand efficiency as high as 92% with 48-V to 1-V conversion.
Other features include adjustable control of output slew rate and voltagepositioning. Inaddition, the TPS53632G device can be used along with other TIdiscrete power MOSFETs and driversfor silicon-based half bridge solutions. TheTPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFNpackage and is rated to operate at a range between –10°C and105°C.
