The band gap circuit design used in the AD5819BCBZ-REEL7 offers several advantages over classical Zener breakdown diode techniques. Most important, no external components are required to achieve full accuracy and significant stability to low power systems. In addition, total supply current to the device, including the output buffer amplifier (which can supply up to 10 mA) is typically 750 μA. The long-term stability of the band gap design is equivalent to selected Zener reference diodes.
The AD5819BCBZ-REEL7 is recommended for use as a reference for 8-, 10- or 12-bit digital-to-analog converters (DACs) that require an external precision reference. The device is also ideal for all types of analog-to-digital converters (ADCs) up to 14-bit accuracy, either successive approximation or integrating designs, and can generally offer better performance than that provided by standard self-contained references.
The AD581J, K, and L are specified for operation from 0°C to +70°C; the AD581S, T, and U are specified for the -55°C to +125°C range. All grades are packaged in a hermetically sealed three-terminal TO-5 metal can.
Feature
- Laser trimmed to high accuracy 10.000 V ±5 mV (L and U models)
- Trimmed temperature coefficient5 ppm/°C maximum, 0°C to 70°C (L model)10 ppm/°C maximum, −55°C to +125°C (U model)
- Excellent long-term stability 25 ppm/1000 hrs (noncumulative)
- −10 V reference capability
- Low quiescent current: 1.0 mA maximum
- 10 mA current output capability
- 3-pin TO-5 package
- MIL-STD-883 compliant versions available
(Picture: Pinout)
