The 74LCX00YMTR device is a low-voltage CMOS quad dual input NAND gate manufactured with sub-micron silicon gate and double layer metal wiring C2MOS technology. It is ideal for low-power and high-speed 3.3 V applications and can be interfaced to a 5 V signal environment for inputs.
It has the same speed performance at 3.3 V as the 5 V AC/ACT family, combined with lower power consumption.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2 kV ESD immunity and transient excess voltage.
Feature
- tPD= 4.3 ns (max.) at VCC= 3 V
- |IOH| = IOL= 24 mA (min.) at VCC= 3 V
- tPLH tPHL
- VCC(opr.) = 2.0 V to 3.6 V
- HBM: 2000 V (MIL STD 883 method 3015)
- MM: 200 V
- CDM: 1000 V
