Medium-speed operation tPHL = tPLH 70 ns (typ) 50 pF and VDD 10 V Quiescent current specified 10 V and 15 V parametric ratings Input leakage current 100 nA (max) at VDD �C 100% tested for quiescent current
DescriptionThe is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP14 and SO14 packages. The HCF4070YM013TR contains four independent exclusive OR gates. This device provides the system designer with a means for direct implementation of the exclusive OR gate for applications such as logical comparators, adders/subtractors, parity generators and checkers.
ApplicationsOrder code Temperature range �C SO14 (automotive grade) DIP14 Package
1. Qualification and characterization (according to AEC Q100 and Q003 or equivalent) and advanced screening (according to AEC Q001 and Q002 or equivalent) are ongoing.
Pin number Symbol/name L, M VSS VDD Function Data inputs Data inputs Data outputs Negative supply voltage Positive supply voltage
Parameter Supply voltage DC input voltage DC input current Power dissipation per package Power dissipation per output transistor Operating temperature Storage temperature Value -0.5 to VDD to +150 Unit mW �C
Absolute maximum ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are relative to the VSS pin voltage. Table 5.
Symbol VDD VI Top Supply voltage Input voltage SO14, DIP14 Operating temperature SO14 (automotive grade) 125 �C
Feature
- HBM: 2 kV
- MM: 200 V
- CDM: 1 kV
