The MC74VHC00DR2G is an advanced high speed quad 2-input NAND Gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent bipolar schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
Feature
- 3.7ns Propagation delay (tPD)
- 2µA Low power dissipation (ICC)
- 28% VCC High noise immunity
- Power down protection provided on inputs
- Balanced propagation delays
- 0.8V Low noise (VOLP)
- Pin and function compatible with other standard logic families
- Latchup performance exceeds 300mA
- ESD performance - HBM >2000V, Machine model >200V
- Chip complexity - 32 FETs or 8 equivalent gates
(Picture: Pinout)