(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008. All other trademarks are the property of their respective owners
DescriptionThe SN74CB3Q3305PW device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305PW device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
Feature
- High-Bandwidth Data Path (Up to 500 MHz(1))
- 5-V Tolerant I/Os With Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typical)
- Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
- Fast Switching Frequency (fOE = 20 MHz Maximum)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC= 0.25 mA Typical)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- APPLICATIONS
- IP Phones: Wired and Wireless
- Optical Modules
- Optical Networking: Video Over Fiber and EPON
- Private Branch Exchange (PBX)
- WiMAX and Wireless Infrastructure Equipment
- USB, Differential Signal interface
- Bus isolation
(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008. All other trademarks are the property of their respective owners
DescriptionThe SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
