High-performance 64K EEPROM offers access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100µA . It is accessed like static RAM for the read or write cycle without external components. It contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Feature
- 8 Kbits x 8 (64 Kbit)
- 5 V ±10% Supply
- Parallel Interface
- 70ns access time
- Self-Timed Erase and Write Cycles (10 ms max)
- Page Write and Byte Write
- Data Polling for end of write detection
- 2 ms Maximum Option see AT28HC64BF datasheet
- Low Power Consumption
- Read / Write current 40 mA (Max)
- Standby current TTL 2 mA (Max), CMOS 100 μA (Max)
- Write-Protection
- Hardware Protection
- Software Data Protect
- More than 100,000 erase/write cycles
- Data retention > 10 years
- Temperature Ranges
- Standard Temperature Range: -40°C to 85°C
- Available in Green (Pb/Halide-free) Packaging Only
- 32-lead, Plastic J-leaded Chip Carrier (PLCC)
- 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
- 28-lead, Plastic Thin Small Outline Package (TSOP)
