The CY62157EV18LL-55BVXI is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (IO0 through IO15) are placed in a high impedance state when:
• Deselected (CE1HIGH or CE2 LOW)
• Outputs are disabled (OE HIGH)
• Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH)
• Write operation is active (CE1 LOW, CE2 HIGH and WELOW)
To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A18).
Feature
• Very high speed: 45 ns
— Industrial: –40°C to +85°C
— Automotive-E: –40°C to +125°C
• Wide voltage range: 4.5V–5.5V
• Ultra low standby power
— Typical Standby current: 2 µA
— Maximum Standby current: 8 µA (Industrial)
• Ultra low active power
— Typical active current: 1.8 mA @ f = 1 MHz
• Ultra low standby power
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package
