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SST39VF200A-70-4I-EKE

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 2Mb (128K x 16) 电源电压: 2.7伏~3.6伏 供应商设备包装: 48-TSOP
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 24.70771 24.70771
10+ 21.36570 213.65708
30+ 19.37942 581.38266
  • 库存: 192
  • 单价: ¥24.70771
  • 数量:
    - +
  • 总计: ¥24.71
在线询价

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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 时钟频率 -
  • 电源电压 2.7伏~3.6伏
  • 包装/外壳 48-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 48-TSOP
  • 访达时期 70 ns
  • 单字、单页写入耗时 20s
  • 存储容量 2Mb (128K x 16)

SST39VF200A-70-4I-EKE 产品详情

The SST39VF200A-70-4I-EKE is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF200A-70-4I-EKE writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.

Feature

  • Organized as 128K x16
  • Low Power Consumption: Active Current: 9 mA (typical)Standby Current: 3 µA (typical)
  • Sector-Erase Capability:Uniform 2 KWord sectors
  • Block-Erase Capability:Uniform 32 KWord blocks
  • Fast Erase and Word-Program: Sector-Erase Time:18 ms(typical), Block-Erase Time:18 ms (typical), Chip-Erase Time:70 ms (typical, Word-Program Time:14 µs (typical)
  • Packages Available:48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm), 48-ball WFBGA (4mm x 6mm)
  • All non-Pb (lead-free) devices are RoHS compliant
SST39VF200A-70-4I-EKE所属分类:存储器,SST39VF200A-70-4I-EKE 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST39VF200A-70-4I-EKE价格参考¥24.707712,你可以下载 SST39VF200A-70-4I-EKE中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST39VF200A-70-4I-EKE规格参数、现货库存、封装信息等信息!
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