The CY62146EV30LL-45BVXI is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80 percent when addresses are not toggling.
Feature
■ Very high speed: 45 ns
■ Temperature ranges
❐ Industrial: –40 °C to +85 °C
❐ Automotive-A: –40 °C to +85 °C
■ Wide voltage range: 2.20 V to 3.60 V
■ Pin compatible with CY62146DV30
■ Ultra low standby power
❐ Typical standby current: 1 μA
❐ Maximum standby current: 7 μA
■ Ultra low active power
❐ Typical active current: 2 mA at f = 1 MHz
■ Easy memory expansion with CE and OE
■ Automatic power down when deselected
■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power
■ Available in a Pb-free 48-ball very fine ball grid array (VFBGA) and 44-pin TSOP II Packages
