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SST39SF040-55-4I-NHE

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 4Mb (512K x 8) 电源电压: 4.5伏~5.5伏 供应商设备包装: 32-PLCC(11.43x13.97)
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 6.63146 6.63146
10+ 6.47382 64.73820
30+ 6.36872 191.06175
100+ 6.26363 626.36310
  • 库存: 0
  • 单价: ¥6.63146
  • 数量:
    - +
  • 总计: ¥6.63
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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 时钟频率 -
  • 电源电压 4.5伏~5.5伏
  • 存储容量 4Mb (512K x 8)
  • 单字、单页写入耗时 20s
  • 包装/外壳 32-LCC(J引线)
  • 供应商设备包装 32-PLCC(11.43x13.97)
  • 访达时期 55 ns

SST39SF040-55-4I-NHE 产品详情

SST39SF010A/020A/040 Parallel SuperFlash® Memory

The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.

Features

4.5-5.5V Read and Write Operations
Endurance – 100,000 cycles (typical)
Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz)
Sector-Erase Capability – Uniform 4 Kbyte sectors
Read Access Time – 55 to 70 ns
Sector-Erase Time 18 ms
Chip-Erase Time: 70 ms (typical)
Byte-Program Time – 14 μs (typical)
Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040-55-4I-NHE 8 seconds (typical values)
Latched Address and Data
Automatic Write Timing – Internal VPP Generation
End-of-Write Detection – Toggle Bit – Data# Polling
TTL I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and Command Sets

Feature

  • Organized as 128K x8 / 256K x8 / 512K x8
  • Single 4.5-5.5V Read and Write Operations
  • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
  • Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)
  • Sector-Erase Capability– Uniform 4 KByte sectors
  • Fast Read Access Time:– 55 ns– 70 ns
  • Latched Address and Data
  • Automatic Write Timing– Internal VPP Generation
  • Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040
  • End-of-Write Detection– Toggle Bit– Data# Polling
  • TTL I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP
  • All devices are RoHS compliant
  • All non-Pb (lead-free) devices are RoHS compliant
SST39SF040-55-4I-NHE所属分类:存储器,SST39SF040-55-4I-NHE 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST39SF040-55-4I-NHE价格参考¥6.631462,你可以下载 SST39SF040-55-4I-NHE中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST39SF040-55-4I-NHE规格参数、现货库存、封装信息等信息!
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