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24LC08B-I/SN

  • 描述:存储类型: Non-Volatile 存储格式: EEPROM 存储容量: 8Kb (256 x 8 x 4) 电源电压: 2.5伏~5.5伏 时钟频率: 400千赫 供应商设备包装: 8-SOIC
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 2.60309 2.60309
  • 库存: 0
  • 单价: ¥2.60310
  • 数量:
    - +
  • 总计: ¥2.60
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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 存储格式 EEPROM
  • 技术 电可擦编程只读存储器
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 单字、单页写入耗时 5ms
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
  • 供应商设备包装 8-SOIC
  • 储存接口 IOC
  • 时钟频率 400千赫
  • 电源电压 2.5伏~5.5伏
  • 访达时期 900 ns
  • 存储容量 8Kb (256 x 8 x 4)

24LC08B-I/SN 产品详情

24AA08/24LC08B/SN I²C™ Serial EEPROM

Microchip’s 24AA08/24LC08B/SN family of devices are 8 Kbit I²C™ Serial EEPROMs available in a variety of package, temperature and power supply variants.

Features

Single Supply with Operation down to 1.7V for 24AA08 Devices, 2.5V for 24LC08B/SN Devices
Low-Power CMOS Technology: Read current 1 mA (maximum), Standby current 1 μA (maximum)
2-Wire Serial Interface, I2C™ Compatible
Schmitt Trigger inputs for Noise Suppression
Output Slope Control to eliminate Ground Bounce
100 kHz and 400 kHz Clock Compatibility
Page Write Time 3 ms (typical)
Self-Timed Erase/Write Cycle
16-Byte Page Write Buffer
Hardware Write-Protect
ESD Protection >4,000V
More than 1 Million Erase/Write Cycles
Data Retention >200 Years

Feature

  • Single Supply with Operation Down to 2.5V
  • Low-Power CMOS Technology:
  • 2-Wire Serial Interface, I2C™ Compatible
  • Schmitt Trigger inputs for Noise Suppression
  • Output Slope Control to eliminate Ground Bounce
  • 100 kHz and 400 kHz Clock Compatibility
  • Page Write Time 3 ms, typical
  • Self-Timed Erase/Write Cycle
  • 16-Byte Page Write Buffer
  • Hardware Write-Protect
  • ESD Protection >4,000V
  • More than 1 Million Erase/Write Cycles
  • Data Retention >200 years
24LC08B-I/SN所属分类:存储器,24LC08B-I/SN 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。24LC08B-I/SN价格参考¥2.603098,你可以下载 24LC08B-I/SN中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询24LC08B-I/SN规格参数、现货库存、封装信息等信息!
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