High-performance 1-megabit EEPROM offers access times to 120ns with power dissipation of 220 m ( 440mW military). Deselected, CMOS standby current is less than 200µA (300µA military). It is accessed like static RAM for the read or write cycle without external components. It contains a 128-byte page register to allow writing of up to 128bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.
Feature
- 128 Kbits x 8 (1 megabit)
- 5V ± 10% Supply
- Parallel Interface
- 120ns access time
- Self-Timed Erase and Write Cycles (10 ms max)
- Page Write and Byte Write
- Data Polling for end of write detection
- Low Power Consumption
- Read / Write current 40 mA (Max)
- Standby current TTL 2 mA (Max), CMOS 200 μA (Max)
- Write-Protection
- Hardware Data Protection
- Software Data Protection
- High-endurance Option 100,000 erase/write cycles
- Data retention > 10 years
- Temperature Ranges
- Standard Temperature Range: -40°C to 85°C
- Military Temperature Range: -55°C to 125°C
- Available in Green (Pb/Halide-free) Packaging
- 32-lead, Plastic J-leaded Chip Carrier (PLCC)
- 32-lead, Plastic Thin Small Outline Package (TSOP)
- Available in dual marked (5962-382670xxx) CERAMIC Hermetic Packaging
- 32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)
- 32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)
- 32-Pad, Non-windowed, Ceramic, Leadless Chip Carrier (LCC)
